1. High thermal conductivity (thermal conductivity of aluminum nitride substrate (> 170W/mK) is suitable for high power chip packaging.

2. The bonding force between metal and sheet metal can reach 10 Mpa.

3. High-precision metal circuit, minimum line width 120um, minimum line spacing 100um.

4. The smoothness of the substrate is less than 0.003mm/mm.

5. The surface roughness of the circuit is less than 0.3um, which is suitable for eutectic welding.

6. High reflective coating can be selected to effectively improve the optical efficiency of flip eutectic.

7. Surface anti-oxidation and anti-vulcanization treatment can be carried out.

8. Suitable for high-power LED light source and high-power LED beads